Negative capacitance in a ferroelectric capacitor

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Anomalous high capacitance in a coaxial single nanowire capacitor.

Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu(2)O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceedin...

متن کامل

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challeng...

متن کامل

Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias.

The emergence of negative capacitance in an ultrathin ferroelectric/paraelectric bilayer capacitor under electrical bias is examined using first-principles simulation. An antiferroelectric-like behavior is predicted, and negative capacitance is shown to emerge when the monodomain state becomes stable after bias application. The polydomain-monodomain transition is also shown to be a source of ca...

متن کامل

The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors

Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105, China ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, Changsha, Hunan 410073, China Pacific Geoscience Centre, Geological Survey of Canada, 9860 West Saanich Road, Sidney, British Columbia, Can...

متن کامل

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nature Materials

سال: 2014

ISSN: 1476-1122,1476-4660

DOI: 10.1038/nmat4148